(3-5 semiconductor) A III-V semiconductor is a compound such as gallium and nitride (GaN) or gallium and arsenide (GaAs). Gallium has three (III) valence electrons, while nitride and arsenide have ...

Finnish scientists have developed a four-junction solar cell based on III-V semiconductor materials that is said to be able to achieve a wide spectral coverage. The cell was monolithically grown ...

Modelling of advanced III V semiconductor devices appears to be a less rigorous approach than for silicon devices as the material properties for modelling of AlGaAs, InGaAs or even InAlAs, and InGaP ...

Now, it's developed a new micro-CPV setup, which uses optical systems to focus light onto small solar cells made with III-V ...

My research is focussed in two areas; on the characterisation of III-V semiconductor materials and devices, especially that containing Bismuth and on the understanding and development of avalanche ...

The University of Michigan has won $3M funding to develop CMOS-compatible, defect-free universal growth of III-N and III-V multilayer heterostructures on silicon.